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对厚度约为０．４μｍ的ＣｏＳｉ２多晶薄膜的电学性质进行了研究。在－２００℃～２０℃温度范围，测量了ＣｏＳｉ２薄膜的电阻率。室温下，电阻率为９～２０μΩ·ｃｍ．随着温度的降低，电阻率减小，且表现出较好的直线性。
The electrical properties of CoSi2 polycrystalline films with a thickness of about 0.4μm were studied. The resistivity of CoSi2 thin film was measured in the temperature range of -200 ℃ ~ 20 ℃. At room temperature, the resistivity of 9 ~ 20μΩ · cm. As the temperature decreases, the resistivity decreases and shows better linearity.