,Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN

• 作 者: SiQin-GaoWa Bao Jie-Jie Zhu Xiao-Hua Ma Bin Hou Ling Yang Li-Xiang Chen Qing Zhu Yue Hao
• 机 构: School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071“,”Key Laboratory of
• 出 处: 中国物理快报（英文版）
• 发表日期: 2020年2期

We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs).A 200 W NHa/N2 remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20-30％.Improved current slump,suppressed gate leakage current,and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment.It is found that NH3/N2 remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties.