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一、引言 硅压力传感器已被广泛用于汽车、控制及生物测量等领域。由于工艺难度大,压力传感器的应变膜尺寸通常大于1×1mm。膜主要用各向异性腐蚀技术形成,需从硅片背面减薄,这样就需要双面光刻。为提高精度,必须增加特殊设备。而这一工艺有明显的不足,与IC工艺兼容性差,硅片利用率低,对制造大规模集成压力传感器,高密度的压力传感器阵列有一定困难。
First, the introduction Silicon pressure sensor has been widely used in automotive, control and bio-measurement and other fields. Due to the difficulty of the process, the strain gauge diaphragm pressure sensor is usually larger than 1 × 1mm. The film is formed predominantly by anisotropic etching techniques and needs to be thinned from the back of the wafer, thus requiring double-sided lithography. In order to improve the accuracy, we must add special equipment. And this process has obvious deficiencies, poor compatibility with IC technology, silicon utilization is low, the manufacture of large-scale integrated pressure sensor, high-density pressure sensor array has some difficulties.