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介绍了新近研制出的一种电阻加热式 CVD/ L PCVD Si C专用制备系统 ,并利用该系统以 Si H4、C2 H4和 H2 作为反应气体在直径为 5 0 m m的 Si(10 0 )衬底上获得了高质量的 3C- Si C外延材料 .用 X射线衍射和 Ram an散射技术研究了 3C- Si C外延膜的结晶质量 ,在 80～ 30 0 K的温度范围内利用 Van der Pauw方法对 1～ 3μm厚的外延膜的电学特性进行了测试 ,室温 Hall迁移率最高达到 470 cm2 / (V· s) ,载流子浓度为 7.7× 10 1 7cm- 3 .
A newly developed resistively heated CVD / L PCVD Si C preparation system was introduced. With this system, Si H 4, C2 H 4 and H 2 were used as reactive gases on a Si (100) substrate with a diameter of 50 mm The high quality 3C-Si C epitaxial material was obtained.The crystal quality of 3C-Si C epitaxial films was studied by X-ray diffraction and Ram an scattering technique.The Van der Pauw method was used in the temperature range of 80 ~ 30 0 K. The electrical properties of 1 ~ 3μm thick epitaxial films were tested. The highest Hall mobility was 470 cm2 / (V · s) and the carrier concentration was 7.7 × 10 17 cm -3 at room temperature.