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A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding.A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure.When electrically pumped at room temperature,the laser operates with a threshold current density of 2.9 kA/cm2 and a slope efficiency of 0.02 W/A.The 1542nm laser output exits mainly from the Si waveguide.