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本文讨论Glass/ITO/p(a-SiC:H)/i(a-Si:H)/n(a-Si:H)/Al结构太阳电池中i层C污染对开路电压Voc、填充因子FF、收集长度L_c及收集效率η的影响,并从机理上做了比较详细地分析.我们的实验结果表明:解决好p/i界面问题和减少i层中C的污染是制备出高效率a-SiC:H窗口非晶硅pin结构太阳电池的关键之一.
In this paper, we discuss the dependence of the i-layer C contamination on the open circuit voltage Voc, the fill factor FF in a glass / ITO / p (a-SiC: H) / i (a-Si: H) / n , Collection length L_c and collection efficiency η, and analyzed in detail in terms of mechanism.Our experimental results show that: to solve the p / i interface problem and reduce the pollution in layer i is to prepare a high-efficiency a- SiC: H window amorphous silicon pin structure one of the key solar cells.