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对硅氧化诱生堆垛层错增长的动力学作了研究,认为硅氧化诱生堆垛层错增长时发射空位,缩短时吸收空位,建立了描写硅氧化诱生堆垛层错增长的动力学方程。根据动力学方程的解,满意地解释了有关的实验现象。
The dynamics of stacking induced stacking induced by oxidation of silicon was studied. It is believed that the generation of stacking defects caused by oxidation of silicon induces vacancies and shortens the absorption vacancies, and establishes the power to describe the growth of stacking faults induced by silicon oxidation Learn equations. Based on the solution of the kinetic equation, the relevant experimental phenomena are satisfactorily explained.