【摘 要】
:
<正>Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelec
【机 构】
:
InstituteofPhysics,DepartmentofTechificalPhysics
【出 处】
:
近代物理研究所和兰州重离子加速器实验室年报:英文版