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继钆(Gd)、钯(Pd)之后,我们在实验上又观察到铑(Rh)是另一类具有特殊界面效应的金属杂质.首先,掺Rh样片的高频和准静态C-V曲线均相对于无Rh控制样片发生了明显的沿正压方向的平移.说明所引入的Rh在硅中的扩散很快,在所用条件下已经到达Si/SiO_2界面并与该处的正电性缺陷中心(D)发生了互作用致使界面有效正电荷密度减小.其次,掺Rh后的C-V曲线,无论高频或准静态,均较无Rh控制片略低.这一点与掺Au后的曲线相反,而与掺Gd、Pd的情况类似,没有出现补偿作用引起串联电阻升高,使掺Au片C-V曲线“压扁”那样的现象.
After Gd and Pd, we also observed that rhodium (Rh) is another kind of metal impurity with special interface effect.Firstly, the high frequency and quasi-static CV curves of Rh-doped samples are all relative In the absence of Rh control, a clear translational shift in the positive pressure direction occurred, indicating that the introduced Rh diffused rapidly in Si and reached the Si / SiO 2 interface under the conditions used and was positively associated with the positively charged defect center D), the effective positive charge density of the interface decreases.Secondly, the CV curve after Rh adsorption is slightly lower than that of the non-Rh control sheet, regardless of the high frequency or the quasi-static state.This is contrary to the curve after the Au doping, However, similar to the case of Gd and Pd, there is no phenomenon that the series resistance increases due to the compensation effect and “flattens” the CV curve of the Au-doped wafer.