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采用射频磁控溅射的方法,在Si(100)基片上制备了纳米β-FeSi2/Si多层结构,利用X射线衍射、透射电子显微镜、光致发光光谱等表征技术,研究了β-FeSi2/Si多层结构的结构、成分和光致发光特性.研究结果表明:利用磁控溅射法得到的Fe/Si多层膜,室温下能够检测到β-FeSi2的1.53μm处光致发光信号;未退火时多层膜是(非晶的FeSi2+β-FeSi2颗粒)/非晶Si结构,退火后则是β-FeSi2颗粒/(晶体Si+非晶Si)结构;退火前后样品有相同的PL信号强度,说明非晶的FeSi2+β-FeSi2颗粒和β-FeSi2颗粒可以产生同样的发光性能.实验测出1.53μm处PL信号也进一步证明了非晶FeSi2的半导体性能.
The nano-β-FeSi2 / Si multilayered structure was prepared on Si (100) substrate by RF magnetron sputtering. The X-ray diffraction, transmission electron microscopy and photoluminescence spectra were used to characterize the β-FeSi2 / / Si multilayer structure.The results show that the photoluminescence signal at 1.53μm of β-FeSi2 can be detected at room temperature by magnetron sputtering. The non-annealed multilayers are (amorphous FeSi2 + β-FeSi2 particles) / amorphous Si structure and β-FeSi2 particles / (crystalline Si + amorphous Si) structure after annealing; the same PL signal Intensity, indicating that amorphous FeSi2 + β-FeSi2 particles and β-FeSi2 particles can produce the same luminescence properties.Experimental measurement PL signal at 1.53μm also further proved the semiconductor properties of amorphous FeSi2.