【摘 要】
：
To further improve the quantum efficiency of atomically thin transition metal dichalcogenides (TMDs) is crucial for the realization of high-performance optoelectronic applications.To this regard,a few chemical or physical approaches such as superacid trea
【机 构】
：
Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education,Northeast Normal Uni
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To further improve the quantum efficiency of atomically thin transition metal dichalcogenides (TMDs) is crucial for the realization of high-performance optoelectronic applications.To this regard,a few chemical or physical approaches such as superacid treatment,electrical gating,dielectric screening,and laser irradiation have been developed.In particular,the laser irradiation appears to be a more efficient way with good processability and spatial selectivity.However,the underlying mechanism especially about whether chemisorption or physisorption plays a more important role is still debatable.Here,we unravel the mystery of laser irradiation induced photoluminescence enhancement in monolayer WS2 by precisely controlling irradiation time and environment.It is found that the synergetic effect of physisorption and chemisorption is responsible for the photoluminescence enhancement,where the physisorption dominates with more than 74％ contribution.The comprehensive understanding of the adsorption mechanism in laser-irradiated TMDs may trigger the potential applications for patterned light source,effective photosensor and ultrathin optical memory.
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