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介绍用MBE制备的带超薄P~+Al_(0.2)Ga_(0.8)As基极的GaAs n~+iδp~+in~+体势垒晶体管。该器件除具有平面掺杂体势垒外,其势垒高度还可改变。基一射结偏压和入射光强度都能调节集电极电流。
The GaAs n ~ + iδp ~ + in ~ + body barrier transistor with ultrathin P ~ + Al_ (0.2) Ga_ (0.8) As base fabricated by MBE is introduced. In addition to having a planar dopant barrier, the device’s barrier height can be varied. The base-emitter emitter bias and the incident light intensity all regulate the collector current.