Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

• 作 者: 马晓华 姜元祺 王鑫华 吕敏 张霍 陈伟伟 刘新宇
• 机 构: School of Advanced Materials and Nanotechnology, Xidian University,Key Laboratory for Wide Band-Gap
• 出 处: Chinese Physics B
• 发表日期: 2014年01期
• 关键词: AlGaN submitted shallow trapping fitting drain have explain attractive transisto

This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors(HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.

This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN / GaN high electron mobility transistors (HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.