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1.T型场效应晶体管 日本NEC公司开发出一种用于下一代无线电微波通信的T型场效应晶体管。直到目前为止,这种类型场效应晶体管的门极长度,一般限制在150纳米.而该T型场效应晶体管的门极长度则压缩至70纳米。 由于控制电流流过该新型晶体管的门极为T型,电极与晶片之间的距离缩短,因而能够减少电流控制时间,使该晶体管可在毫米波超高频情况下工作。 这种T型场效应管的电极为金和钨,电阻低,可降低电极因温度上升而产生的噪声放大现象。
1.T type field effect transistor Japan NEC Corporation has developed a kind of T type field effect transistor used for the next generation of radio microwave communication. Until now, the gate length for this type of field-effect transistor has typically been limited to 150 nanometers, while the gate length of the T-type field-effect transistor has been compressed to 70 nanometers. Since the gate of the new transistor is T-shaped and the distance between the electrode and the wafer is shortened, the current control time can be reduced so that the transistor can operate at millimeter-wave UHF. The T-FETs have gold and tungsten electrodes with low resistance, which reduces the noise amplification of the electrodes due to temperature rise.