Introduction of F_4-TCNQ/MoO_3 layers for thermoelectric devices based on pentacene

• 作 者: 吴双红 Ryosuke Nakamichi Masatsugu Taneda 张其胜 Chihaya Adachi
• 机 构: Life BEANS Center Kyushu,Bio Electromechanical Autonomous Nano-Systems(BEANS) Laboratory,744 Motooka
• 出 处: Chinese Physics B
• 发表日期: 2014年09期
• 关键词: TCNQ transistor examining Seebeck drain versus electricity semicon contacts cept

We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane(F4-TCNQ) and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.

We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer By examining the contact resistance using a field-effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.