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随着器件几何尺寸的缩小,将整个工艺过程中的扩散时间减至最小已变得日益重要。任何工序,如果所用的扩散时间长于必需的扩散时间,均将导致结深和非饱和扩散栅的控制变得困难。 快速热退火可用于注入活化、硅化物的形成、介质层的回流以及对某些与时间有明显依赖关系的工艺过程控制(如高温下栅氧化工艺)。 在本研究中,通过测量击穿电压、温偏应力C-V漂移、漏电流和缺陷密度等氧化膜参数,研究了源/漏快速热退火对栅氧化膜质量的影响。
As device geometries shrink, it has become increasingly important to minimize diffusion time throughout the process. Any process, if the diffusion time used is longer than the necessary diffusion time, will result in the difficulty of controlling the junction depth and saturation diffusion gate. Rapid thermal annealing can be used for implant activation, silicide formation, dielectric layer reflow, and process control (such as high temperature gate oxidation) that is significantly time-dependent. In this study, the effects of source / drain rapid thermal anneal on the gate oxide film quality were investigated by measuring oxide film parameters such as breakdown voltage, C-V drift in temperature-induced stress, leakage current and defect density.