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本文利用椭偏光谱法测量了能量为200keV、剂量为2×10~(18)cm~(-2)的~(16)O~+注入Si以及退火样品.应用多层介质膜模型和有效介质近似,分析了这些样品的SIMOX结构的各层厚度以及各层中的主要组份.提出了从椭偏谱粗略估算表层Si及埋层SiO_2厚度的简单方法.研究结果表明,这种条件下的O~+注入Si可以形成SIMOX结构,经高温退火后,表层Si是较完整的单晶层,埋层SiO_2基本没有Si聚积物.椭偏谱的结果与背散射、扩展电阻测量和红外吸收光谱等结果作了比较.
In this paper, the ion implantation of Si and annealed samples with ~ (16) O ~ + implantation at 200keV and dose of 2 × 10 ~ (18) cm ~ (-2) were measured by ellipsometry.Using multilayer dielectric film model and effective medium Approximately, the thickness of each layer and the main components in each layer of SIMOX structure of these samples were analyzed, and a simple method to roughly estimate the thickness of surface layer Si and buried layer SiO 2 from the ellipsometer was proposed. The results show that under these conditions The SIMOX structure can be formed by O ~ + implantation, and the surface Si is a complete single crystal layer after annealing at high temperature, and there is almost no Si accumulation in the buried SiO 2 layer. The results of ellipsometry and backscattering, extended resistance measurement and infrared absorption spectroscopy The results were compared.