Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser

• 作 者: 梁锋 赵德刚 江德生 刘宗顺 朱建军 陈平 杨静 刘炜 李翔 刘双韬 邢瑶 张立群 李沫 张健
• 机 构: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
• 出 处: Chinese Physics B
• 发表日期: 2017年11期
• 关键词: waveguide indium leakage attributed varied lasing FWHM systematically doping por

Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In_(0.05) Ga_(0.95)N lower waveguide(LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly.

Performance is of blue and green laser diodes (LDs) with different u-InGaN upper waveguides (UWGs) are considered theoretically by using LASTIP. It is found that the slope efficiency (SE) of blue LD decreases due to great optical loss when the indium content of the u-lnGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current Thus, a new blue LD structure with In_ (0.05) Ga_ (0.95) N lower waveguide (LWG) is designed to reduce the optical loss, and its slope efficiency is significantly increased.