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研究了干法反应刻蚀和湿法强碱化学腐蚀方法对场致发射阵列顶部的锐化问题以及不同工作气体的干法反应刻蚀和湿法化学腐蚀对场致发射阵列Si尖顶部的SiO2 绝缘层的去除方法 ,并对这两种方法进行了比较 ,给出了各自的优缺点。
The effects of dry reactive etching and wet alkaline etching on the top of the field emission array and the effects of dry reactive etching and wet chemical etching of different working gases on the top of SiO2 Insulation layer removal method, and the two methods were compared, given their advantages and disadvantages.