,Simulation of the light extraction efficiency of nanostructure light-emitting diodes

• 机 构: state Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor,Chinese Academy of Sc
• 出 处: 中国物理B(英文版)
• 发表日期: 2011年7期
• 关键词: light extraction efficiency InGaN/GaN multiple quantum well nanostructure

The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar,nanorough of P-GaN surface,coreshell and nano-interlayer structure.From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures,especially those with an InGaN or AlGaN nano-interlayer.With a 420-nm luminescence wavelength,the light extraction efficiency can reach as high as 65% for the InGaN or ...","The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar,nanorough of P-GaN surface,coreshell and nano-interlayer structure.From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures,especially those with an InGaN or AlGaN nano-interlayer.With a 420-nm luminescence wavelength,the light extraction efficiency can reach as high as 65%for the InGaN or A1GaN nano-interlayer structure with appropriate In or Al content while only 26%for the planar structure.