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Single crystal Ga X In 1-X As films have grown up on GaAs(100) substrate at 375℃ and on InP(100) substrate at 390℃, respectively, by the method of rf sputtering with using undoped GaInAs polycrystal as target. However, on Si(100) or Si(111) substrates at 260～390℃, even at 465℃, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and optical properties of the Ga X In 1-X As films were investigated using X ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X ray (EDAX), Hall measurements and spectroscopic ellipsometry.
Single crystal Ga X In 1-X As films have grown up on GaAs (100) substrates at 375 ° C. and on InP (100) substrates at 390 ° C., respectively, by the method of rf sputtering with using undoped GaInAs polycrystal as target. , only polycrystalline films were obtained on Si (100) or Si (111) substrates at 260-390 ° C. even at 465 ° C. In addition, the structure and composition of the electrical characteristics and optical properties of the Ga X In 1-X As films were investigated using X ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X ray (EDAX), Hall measurements and spectroscopic ellipsometry.