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本文研究了多孔硅（ＰＳ） 二极管表面发射电子的特性。ＰＳ二极管由薄金膜、ＰＳ层、ｎ 型Ｓｉ 衬底和欧姆接触铝背电极组成。在真空中，当在金电极和铝背电极间加适当高的正电压且在收集极板和金电极间存在高外电场时，伴随着可见光，电子均匀地穿过金膜发射出来。电子发射的机理基于ＰＳ层外表面附近的强场效应。在１３－５Ｖ 时得到最大发射电流密度为１０μＡ·ｃｍ － ２ ，最大发射效率为２ ×１０ － ４ 。样品的ＦｏｗｌｅｒＮｏｒｄｈｅｉｍ（ＦＮ） 曲线表现为线性。实验结果暗示有大量的电子直接隧穿或通过界面处电子从Ｓｉ 纳米核的价带向相邻Ｓｉ 纳米核的导带隧穿后被发射向真空。
In this paper, the characteristics of electron emission on the surface of porous silicon (PS) diode have been studied. The PS diode consists of a thin gold film, a PS layer, an n-type Si substrate, and an ohmic contact aluminum back electrode. In a vacuum, when a suitably high positive voltage is applied between the gold electrode and the aluminum back electrode and a high external electric field exists between the collector plate and the gold electrode, the electrons are emitted uniformly through the gold film with visible light. The mechanism of electron emission is based on the strong field effect near the outer surface of the PS layer. At 13-5V, the maximum emission current density is 10μA · cm - 2 and the maximum emission efficiency is 2 × 10 - 4. The sample Fowler Nordheim (F N) curve showed linear. The experimental results suggest that a large number of direct electron tunneling tunneling or tunneling through the valence band of Si nanocones to the adjacent Si nanocones through the interface electron is emitted to the vacuum.