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基于TSMC 0.18μm CMOS工艺,设计了一种应用于WLAN的高线性度CMOS AB类功率放大器。电路采用两级结构和片外匹配网络。为了实现高线性度,采用电容补偿技术,并选择合适的偏置点以减小g_m的3次非线性,在绑线和PCB走线时,利用HFSS进行了精确的建模。该功率放大器供电电压为1.8V和3.3V,后仿结果显示,在2.45GHz处的输出1dB压缩点P_(1dB)为25.3dBm,功率附加效率PAE为33%;在WLAN802.11g测试环境下,输入64QAM信号进行仿真,输出误差向量幅度EVM和频谱掩膜均满足指标要求,最大线性输出功率为15dBm。
Based on TSMC 0.18μm CMOS process, a high linearity CMOS class AB power amplifier designed for WLAN is designed. The circuit adopts two-level structure and off-chip matching network. In order to achieve high linearity, the capacitance compensation technique is adopted and a suitable bias point is selected to reduce the third-order nonlinearity of g_m. Accurate modeling is performed by using HFSS during bonding and PCB alignment. The power supply voltage of the power amplifier is 1.8V and 3.3V. The simulation results show that the output 1dB compression point P_ (1dB) at 2.45GHz is 25.3dBm and the power added efficiency PAE is 33%. In the WLAN 802.11g test environment, Input 64QAM signal simulation, output error vector magnitude EVM and spectrum mask meet the requirements of the index, the maximum linear output power of 15dBm.