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我们在合成云母研究中,发现不同组成的合成云母配料具有不同的晶化热,因此由合成云母晶化热的测定可以定量地判断不同配料的结晶能力。此外,如已知晶化热ρ,还可按V=η/ρS·dT/dx(式中η为导热率;S为密度;dT/dx为温度梯度)计算出晶面的生长速度V。合成云母的晶化热已有大门信利测定的结果,他们是用偏硅酸锂的晶化热作标准求出的;但我们发现,文献上记载的偏硅酸锂的晶化热与我们的实际测定结果有很大出入,因此特进行了如下的实验验证,对上述两种物质的晶化热值做了修正。
In the study of synthetic mica, we found that the different components of synthetic mica have different crystallization heat. Therefore, the crystallization ability of different ingredients can be quantitatively determined by the determination of the heat of crystallization of synthetic mica. In addition, the growth rate V of the crystal plane can also be calculated as V = η / ρS · dT / dx (where η is the thermal conductivity; S is the density; dT / dx is the temperature gradient), as is known, Crystallization heat of synthetic mica has been the result of the determination of the door, they are calculated using the standard heat of crystallization of lithium metasilicate; but we found that the crystallization temperature of lithium metasilicate recorded in the literature and our The actual measurement results are very different, so the special verification of the following experiments, the heat value of the crystallization of the above two substances have been amended.