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本文所用a_Si:H和a-Si_xN_(1-x):H薄膜是用辉光放电法制备而成的。薄膜中氮含量由淀积气体中氮气与硅烷气体体积比γ(=N_2/SiH_4)来控制。利用椭圆偏振光谱测定了a-Si:H和a-Si_xN_(1-x):H在波长为2000A～6000A的范围内的光学常数。着重研究了其光学参数随制备时的衬底温度T和γ而变化的变化规律。
The a_Si: H and a-Si_xN_ (1-x): H thin films used in this paper are prepared by glow discharge method. The nitrogen content in the film is controlled by the volume ratio of nitrogen to silane gas γ (= N 2 / SiH 4) in the deposition gas. The optical constants of a-Si: H and a-Si_xN_ (1-x): H in the wavelength range from 2000A to 6000A were measured by ellipsometry. The changes of the optical parameters with the substrate temperature T and γ during preparation are emphatically studied.