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美国Innovative Silicon开发出了采用块状硅(Bulk Silicon)底板的无电容器式DRAM。该产品的工作电压不到1V,满足了DDR3要求的工作速度水平和功耗水平,因此,“已经具备了完全取代DRAM所需的核心技术”(Innovative
Innovative Silicon USA has developed a capacitorless bulk DRAM using Bulk Silicon backplane. The product’s operating voltage is less than 1V, meeting the operating speed level and power consumption required by DDR3, so “already has the core technology needed to completely replace DRAM.”