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我们用分子束外延法已生长出了ZnSe、ZnTe单晶薄层。外延层的生长速率基本上由分子束流量和衬底温度决定。本文讨论了这种二元化合物的生长速率,包括衬底温度、结晶性及分子束强度,并和实验结果作了比较分析。所获得的生长速率与衬底温度和入射束比的关系能用原子表面覆盖度的动力学方程得到解释。
We have grown thin layers of ZnSe, ZnTe single crystals by molecular beam epitaxy. The growth rate of the epitaxial layer is basically determined by the molecular beam flux and substrate temperature. This article discusses the growth rate of the binary compounds, including the substrate temperature, crystallinity and molecular beam intensity, and compared with the experimental results were analyzed. The relationship between the obtained growth rate and the substrate temperature and the incident beam ratio can be explained by the kinetic equation of atomic surface coverage.