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采用射频磁控溅射法在Si衬底上制备新型栅介质SrHfON薄膜。采用X射线衍射(XRD)仪、高分辨透射电镜(HRTEM)和X射线光电子谱(XPS)分析退火对SrHfON薄膜的界面形态、薄膜的结构和电学性能的影响。结果表明,SrHfON薄膜经900℃退火后仍保持非晶态,表现出良好的热稳定性。SrHfON薄膜与Si衬底的界面主要由HfSixOy和SiO2组成。以SrHfON薄膜为栅介质的MOS电容结构具有较小的漏电流密度,并且漏电流密度随着退火温度的升高而减小。在外加偏压(Vg)为+1V时样品在沉积态和900℃退火后的漏电流密度分别为4.3×10-6和1.2×10-7A/cm2。研究表明,SrHfON薄膜是一种很有希望替代SiO2的新型栅介质材料。
A novel gate dielectric SrHfON thin film was prepared on Si substrate by RF magnetron sputtering. The effects of annealing on the interface morphology, the structure and electrical properties of SrHfON films were analyzed by XRD, HRTEM and XPS. The results show that the SrHfON films remain amorphous after annealing at 900 ℃, showing good thermal stability. The interface between the SrHfON thin film and the Si substrate mainly consists of HfSixOy and SiO2. The MOS capacitor structure using SrHfON as a gate dielectric has a small leakage current density, and the leakage current density decreases as the annealing temperature increases. The leakage current densities of the samples at the applied bias (Vg) of + 1V were 4.3 × 10-6 and 1.2 × 10-7A / cm2 respectively after the samples were annealed at 900 ℃. Studies have shown that SrHfON film is a promising new gate dielectric material to replace SiO2.