【摘 要】
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The heterogeneous integration of silicon thin film and lithium niobate[LN]thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN,comprising a p
【机 构】
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School of Physics,State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China
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The heterogeneous integration of silicon thin film and lithium niobate[LN]thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN,comprising a potentially promising material platform for photonic integrated circuits.Based on ion-implantation and wafer-bonding technologies,a 3 inch wafer-scale hybrid mono-crystalline Si/LN thin film was fabricated.A high-resolution transmission electron microscope was used to investigate the crystal-lattice arrangement of each layer and the interfaces.Only the H-atom-concentration distribution was investigated using secondary-ion mass spectroscopy.High-resolution X-ray-diffraction ω-2θ scanning was used to study the lattice properties of the Si/LN thin films.Raman mea-surements were performed to investigate the bulk Si and the Si thin films.Si strip-loaded straight waveguides were fabricated,and the optical propagation loss of a 5-pm-width waveguide was 6 dB/cm for the quasi-TE mode at 1550 nm.The characterization results provide useful information regarding this hybrid material.
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