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利用动态控制阳极短路的基本原理 ,提出了一种实现高速 IGBT的新思路 .该结构的关键是引入了一个常开型 p- MOSFET,在 IGBT导通时关断 ,不增加导通损耗 ,而在器件关断过程中能阻止阳极继续向漂移区注入少数载流子 ,同时为载流子流入阳极提供一条通道 ,使其快速关断 .理论分析和模拟结果证明 ,该结构在击穿电压、导通损耗不变的情况下 ,能将关断时间减少 75 %以上 .应用这样的结构只需增加两个分压比一定的分压电阻 .新结构对驱动电路的要求与普通 IGBT完全一致 ,是一种实用的高速 IGBT结构 .
A new idea to realize high-speed IGBT is proposed by using the principle of dynamic control of anode short circuit. The key of this structure is to introduce a normally-on type p-MOSFET which is turned off when the IGBT is on and does not increase conduction losses During the turn-off of the device, the anode can be prevented from continuously injecting minority carriers into the drift region, and at the same time, a channel can be provided for the carriers to flow into the anode to be turned off rapidly. Theoretical analysis and simulation results show that, Turn-on loss unchanged under the circumstances, the turn-off time can be reduced by more than 75% .Application of this structure only increase the partial pressure ratio of two certain voltage divider resistance.New structure of the drive circuit requirements and ordinary IGBT exactly the same, Is a practical high-speed IGBT structure.