Dependence of current-voltage characteristics of pseudomorphic AlAs/In_(0.53)Ga_(0.47)As/InAs resona

• 作 者: 张杨 张予 曾一平
• 机 构: Novel Materials laboratory, Institute of Semiconductors, Chinese Academy of Sciences,The Internship
• 出 处: Chinese Physics B
• 发表日期: 2008年12期
• 关键词: resonant Ga valley continually decreasing coherent impurity fabrication contacts

This paper studies the dependence of I-V characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunnelling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunnelling diodes are continually decreasing with increasing well width.

This paper studies the dependence of IV characteristics on quantum well widths in AlAs / In0.53Ga0.47As and AlAs / In0.53Ga0.47As / InAs resonant tunnelling structures grown on InP substrates. It shows that peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunnelling diodes are continually decreasing with increasing well width.