在双镶嵌铜互联中0.13微米器件生成用的基于PVD和ALD阻挡层的先进技术(英文)

• 作 者: Prabu Gopalraja Suraj Rengarajan John Forster Rahul Jauhari Umesh Kelkar Anthony Chan Marc Schweitzer Keith Miller Ajay Bhatnagar Nirmalya Maity Jim Van Gogh Suketu Parikh
• 机 构: Applied Materials Inc,Applied Materials Inc,Applied Materials Inc,Applied Materials Inc,Applied Mate
• 出 处: 半导体技术
• 发表日期: 2003年04期
• 关键词: ALD PVD coverage sputtering wafer processed Figure resistivity saturation induct

1. IntroductionThe requirement of minimal bottom coverageand thick sidewall coverage for PVD-based films forlow via resistance and improved stress migration isnot easy to achieve with traditional depositionmethods. Modern I-PVD techniques give high bot-t

1. Introduction The requirement of minimal bottom coverage and thick sidewall coverage for PVD-based films forlow via resistance and improved stress migration is not easy to achieve with conventional deposition methods. Modern I-PVD techniques give high bot-t