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利用灯光瞬态退火处理Si,S离子注入SI-GaAs样品,在950℃5秒的条件下得到了最佳的电特性,Be,Mg离子注入SI-GaAs样品在800℃ 5秒退火得到了最佳的电特性.Si,S,Be注入GaAs样品在适当的条件下得到了陡峭的载流子剖面分布,而Mg注入的样品有Mg的外扩散和较大的尾部扩散.透射电镜测量表明,Si低剂量和Be大剂量注入退火后单晶恢复良好,而Si和Mg大剂量注入退火后产生了大量的二次缺陷.应用Si和Mg注入GaAs分别制作了性能良好的MESFET和β=1000的GaAIAs/GaA,双极型晶体管(HBT).
The best electrical properties were obtained at 950 ℃ for 5 seconds with Si and S ions implanted into the SI-GaAs samples by transient light annealing. The Be-Mg ion-implanted SI-GaAs samples were annealed at 800 ℃ for 5 seconds Good electrical properties.Si, S, Be implanted into the GaAs sample under appropriate conditions to obtain a steep carrier profile, while Mg injection of the sample diffusion and larger tail diffusion Mg.Transmission electron microscopy showed that, Si single crystal after low dose and Be large dose annealing annealed well, and a large number of secondary defects after Si and Mg high dose implantation annealing.MiasFET with good properties and β = 1000 GaAIAs / GaA, bipolar transistor (HBT).