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意法半导体有限公司(SGS-THOMSON Microelectronics)通过引入两个高密度器件(M4822M1Y和M482512A/Y),扩展了它的不易失静态随机存取存储器(SRAM)ZEROPOWER系列。这两个器件含有极低功率的COMS SRAM、电源故障控制电路和锂电池,并且采用单个600密耳塑料DIP包装,符合标准JEDEC SRAM管脚规定。 功率降落控制电路随时监视Vcc线,当电压超出了Vcc电压范围时,该控制电路将SRAM置于写保护状态,以防止杂散写周期。当Vcc电压降至低于内部的电池电
SGS-THOMSON Microelectronics has expanded its ZEROPOWER family of non-volatile static random access memories (SRAMs) by introducing two high-density devices, the M4822M1Y and M482512A / Y. Both devices contain extremely low-power COMS SRAM, power failure control circuitry, and lithium batteries in a single 600-mil plastic DIP package that complies with standard JEDEC SRAM pinout. The power-down control circuit monitors the Vcc line at all times. When the voltage exceeds the Vcc voltage range, the control circuit places the SRAM in write-protect state to prevent stray write cycles. When the Vcc voltage drops below the internal battery