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一种高频、硬开关boost转换器(VIENNA拓扑)被用来描述新型AlGaN/GaN/A1GaN功率双异质结场效应晶体管(DHEFTs)在运行状态下的特性。这种变换器可以让我们精确地测量出功率电路设计中最重要的器件参数(动态开通电阻R_(dyn),门极漏极电荷Q_(gd),密勒电荷Q_(gd),开通电压V_(th),开关时间t_(on)和t_(off),质品因数FOM……)。通过采用正确的测量手段和自行开发的精确度/分辨率改进电路可以实现高度准确性。在A1GaN/GaN/AIGaN DHEFTs样品上进行的动态开通电阻和门极电荷的测量得到了很好的结果。
A high frequency, hard switched boost converter (VIENNA topology) is used to characterize the new AlGaN / GaN / A1GaN power double heterojunction field effect transistors (DHEFTs) in operation. This converter allows us to accurately measure the power circuit design of the most important device parameters (dynamic turn-on resistance R_ (dyn), gate drain charge Q_ (gd), Miller charge Q_ (gd), turn-on voltage V_ (th), switching times t_ (on) and t_off, the product factor FOM ...). High accuracy can be achieved by using the right measurement and self-developed precision / resolution improvement circuitry. Good results have been obtained for the measurement of the dynamic on-resistance and the gate charge on A1GaN / GaN / AIGaN DHEFTs samples.