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本文叙述了用Si~+注入GaAs形成低噪声MESFET有源层的初步实验结果.获得了峰值载流子浓度为1～2×10(17)cm~(-3)、在交界面处迁移率≥3000cm~2/V·s的有源层,制出了在2GHz下NF为0.9dB、G_a为14.5dB的双栅FET和9.5GHz下NF为2.0dB、G_a为9.5dB的单栅FET.实验结果表明,采用Si~+注入沟道的器件达到了汽相外延器件的最佳性能,某些参数超过了汽相外延器件.
This paper describes the preliminary experimental results of GaAs as an active layer for the formation of a low noise MESFET by Si ~ + implantation. The peak carrier concentration is 1 ~ 2 × 10 (17) cm ~ (-3) and the mobility at the interface The active layer of ≧ 3000 cm -2 / V · s produces a single gate FET having a NF of 0.9 dB and a G_a of 14.5 dB at 2 GHz and an NF of 2.0 dB at 9.5 GHz and a G_a of 9.5 dB. The experimental results show that the best performance of the vapor phase epitaxy device is achieved by the Si ~ + implanted channel device, and some parameters outperform the vapor phase epitaxial device.