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对普通矩形平面靶的磁场分布、电子运动轨迹和电子分布进行了理论计算。通过磁场的解析表达式,解出电子在磁场中的运动方程,求得并从理论上解释了电子的运动轨迹。由电子的运动轨迹,并运用Monte Carlo方法,求得电子在磁场中的分布,得到电子分布的均值和标准差。本文通过在基片和靶材间加正向电场,改变了电子的运动轨迹和空间分布,优化了矩形平面靶的刻蚀形貌,提高了靶材利用率。
The magnetic field distribution, electron trajectory and electron distribution of ordinary rectangular planar target are theoretically calculated. Through the analytical expression of the magnetic field, the equation of motion of the electrons in the magnetic field is solved, and the trajectory of the electron is obtained and theoretically explained. From the trajectories of electrons and the Monte Carlo method, the distribution of electrons in the magnetic field is obtained, and the mean and standard deviation of the electron distribution are obtained. In this paper, by adding a forward electric field between the substrate and the target, the trajectory and spatial distribution of the electrons are changed, the etched morphology of the rectangular planar target is optimized, and the utilization of the target is improved.