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本文叙述了水平三温区法制备低位错和无位错掺Si—GaAs单晶的工艺,介绍了三温区炉的结构,论述了掺Si—GaAs晶体与石英舟的沾润和单晶生长的有关问题。试验结果表明水平三温区炉工艺稳定,具有重现性。在本工艺的条件下,单晶生长率可达70％以上。(100)面生长,获得8厘米~2低位错单晶,位错密度小于2000厘米~2;(100) 面为5厘米~2无位错单晶,位错密度小于500厘米~(-2),在尾段有零位错样品。
This paper describes the preparation of low dislocation and dislocation-free Si-GaAs single crystal by the horizontal three-temperature zone method. The structure of the three-temperature zone furnace is introduced. The doping and single crystal growth of Si-GaAs crystal and quartz boat are discussed Related issues. The test results show that the level three temperature zone furnace process is stable and reproducible. Under the conditions of this process, single crystal growth rate of up to 70%. (100) plane to obtain 8 cm ~ 2 low dislocation single crystal, the dislocation density is less than 2000 cm ~ 2; (100) face is 5 cm ~ 2 without dislocation single crystal, dislocation density less than 500 cm ~ ), There is zero in the tail section of the wrong sample.