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采用磁控溅射法,选用LaNi O3作为缓冲层,在硅基片上制备出了0.74Pb(Mg1/3Nb2/3)O3-0.26PbTiO3弛豫铁电薄膜.研究了沉积温度对薄膜的微结构和光学性能的影响.其中,沉积温度为500oC时制备的薄膜,不仅具有纯的钙钛矿结构,高度(110)择优取向、致密、无裂纹的形貌、而且具有最大的剩余极化,大小为17.2μC/cm2.使用柯西模型进行拟合反射谱,分析得到薄膜的折射率和消光系数.在波长为633 nm时,500oC沉积的薄膜的折射率大小为2.41.另外,薄膜的光学带隙在2.97～3.22 eV范围内.并初步讨论了这些薄膜的光学性能的差异.
Using magnetron sputtering method, LaNiO3 was chosen as the buffer layer to prepare a 0.74Pb (Mg1 / 3Nb2 / 3) O3-0.26PbTiO3 relaxation ferroelectric thin film on a silicon substrate. The effects of deposition temperature on the microstructure and Optical properties.Among them, when the deposition temperature is 500oC, the thin films prepared not only have the pure perovskite structure, but also have the high (110) preferred orientation, compact and crack-free morphology, and have the largest remanent polarization 17.2μC / cm2. The refractive index and extinction coefficient of the films were obtained by using the Cauchy model. The refractive index of the films deposited at 500oC was 2.41 at 633 nm. In addition, the optical band gap In the range of 2.97 ~ 3.22 eV, and the differences of the optical properties of these films are discussed preliminarily.