论文部分内容阅读
通过旋涂法,采用不同浓度的前躯体制备了氧化锌多层膜,并制备了基于此多层膜的薄膜晶体管器件.实验证明,基于按照氧化锌前躯体浓度顺序为0.25、0.10和0.05 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的晶体管器件的载流子迁移率为0.02 cm.2V-.1s-1,高于按照浓度顺序为0.05、0.10和0.25 mol.L-1依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率(0.013 cm2.V-.1s-1).原子力显微镜(AFM)结果表明,前一种薄膜粗糙度的均方根值(rms)为3.95 nm,而后一种薄膜粗糙度的rms远远高于前者,为4.52 nm,这就说明了氧化锌薄膜的粗糙度对薄膜的半导体性质有很大的影响,这是由于平整的薄膜有利于形成理想的源/漏电极与半导体层的接触.在晶体管中,起传输作用的半导体层是靠近ZnO/SiO2界面处的几纳米的半导体层中的氧化锌晶粒,因此起始形成的氧化锌薄膜的结晶度影响着晶体管的性能.采用X射线衍射(XRD)测试了多层膜中起始形成的薄膜的结晶性能.对于前一种薄膜,起始形成的薄膜为多晶薄膜,而对于后一种薄膜,起始形成的薄膜是无定形薄膜.因此,粗糙度以及起始形成的薄膜的结晶度影响着多层半导体薄膜的性质.
ZnO thin films were prepared by spin-coating method using different concentrations of precursors, and thin-film transistor devices based on the multilayer films were prepared. The experimental results show that based on the zinc oxide precursor concentration of 0.25,0.10 and 0.05 mol The carrier mobility of the transistor device of L-1 zinc oxide film prepared by spin-coating the precursor solution in turn was 0.02 cm.2V-1s-1, higher than that of 0.05, 0.10 and 0.25 mol.L- 1 The carrier mobility (0.013 cm2.V-1s-1) of the zinc oxide thin films prepared by spin-coating the precursor solution in turn was measured by atomic force microscopy (AFM). The rms value of the former film roughness rms) is 3.95 nm, while the rms of the latter film roughness is much higher than the former, which is 4.52 nm, which shows that the roughness of the zinc oxide film has a great influence on the semiconducting properties of the film due to the smooth The thin film favors the formation of the desired contact of the source / drain electrodes with the semiconductor layer In the transistor, the transport-acting semiconductor layer is zinc oxide grains close to a few nanometers of the semiconductor layer at the ZnO / SiO2 interface, thus starting to form The crystallinity of the zinc oxide film affects the performance of the transistor X-ray diffraction (XRD) was used to examine the crystallization behavior of the initially formed film in the multilayer film For the former film, the initially formed film was a polycrystalline film and for the latter film, the initially formed film was Amorphous films Therefore, the roughness and the crystallinity of the initially formed film influence the properties of the multilayer semiconductor film.