During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon crystal by changing the distribution of
According to the basic idea of classical yin-yang complementarity and modem dual-com plementarity, in a simple and unified new way proposed by Luo, the unconven
Liquid crystal (LC) alignment is most important in LC devices. In this paper, we quantitatively analyze the LC scalar order parameters on the rubbed surface of