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采用恒电流技术直接在金属钨片上制备了白钨矿结构的Ba1-xSrxWO4晶态薄膜;讨论了电流密度、酸度、温度、电解液浓度等工艺条件对薄膜形成的影响。采用X射线衍射(XRD)分析了薄膜的晶相;扫描电镜(SEM)研究了薄膜的表面形貌;X射线光电子能谱(XPS)分析了薄膜的成分与价态。研究结果表明,通过控制上述工艺条件可以控制沉积薄膜的质量;在室温附近、较低的电流密度、pH值在12～13范围内时,能够制备出结晶良好、表面均匀的Ba1-xSrxWO4固溶体薄膜。
The scheelite-structured Ba1-xSrxWO4 thin films were prepared by galvanostatic technique directly on tungsten metal sheets. The effects of current density, acidity, temperature and electrolyte concentration on the film formation were discussed. The crystal phase of the film was analyzed by X-ray diffraction (XRD). The surface morphology of the film was investigated by scanning electron microscopy (SEM). The composition and valence of the film were analyzed by X-ray photoelectron spectroscopy (XPS). The results show that the quality of the deposited films can be controlled by controlling the above process conditions. The Ba1-xSrxWO4 solid solution films with good crystallinity and uniform surface can be prepared when the current density is lower than room temperature and the pH value is in the range of 12-13 .