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This paper presents a high-speed column-parallel cyclic analog-to-digital converter(ADC) for a CMOS image sensor.A correlated double sampling(CDS) circuit is integrated in the ADC,which avoids a stand-alone CDS circuit block.An offset cancellation technique is also introduced,which reduces the column fixed-pattern noise(FPN) effectively.One single channel ADC with an area less than 0.02 mm~2 was implemented in a 0.13μm CMOS image sensor process.The resolution of the proposed ADC is 10-bit,and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively.The power consumption from 3.3 V supply is only 0.66 mW.An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels.The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.
This paper presents a high-speed column-parallel cyclic analog-to-digital converter (ADC) for a CMOS image sensor. A correlated double sampling (CDS) circuit is integrated in the ADC, which avoids a stand-alone CDS circuit block. An offset cancellation technique is also introduced, which reduces the column fixed-pattern noise (FPN) effectively. One single channel ADC with an area less than 0.02 mm ~ 2 was implemented in a 0.13 μm CMOS image sensor process. The resolution of the proposed The ADC is 10-bit, and the conversion rate is 1.6 MS / s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively. The power consumption from 3.3 V supply is only 0.66 mW. 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels. The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.