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利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜(ZnO:In,P),所用靶材为掺杂五氧化二磷(P2O5)和氧化铟(In2O3)的氧化锌(ZnO)陶瓷靶,掺杂质量分数分别为1.5%和0.3%,溅射气体为Ar和O2的混合气体。原生ZnO薄膜是绝缘的, 600℃退火5 min后导电类型为n型,而800℃退火5 min后为p型。p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12.4Ω.cm, 1.6×1017cm-3和3.29 cm2.V-1.s-1。X射线衍射测量结果表明所有样品都只有(002)衍射峰,并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移,意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代O而是取代Zn。因此,铟磷共掺ZnO薄膜中,In和P都取代Zn,并且PZn与2个锌空位(VZn)形成PZn-2VZn复合受主,薄膜表现为p型。
Indium phosphorus co-doped zinc oxide thin films (ZnO: In, P) were grown on quartz substrate by RF magnetron sputtering. The targets used were zinc oxide doped with phosphorus pentoxide (P2O5) and indium oxide (ZnO) ceramic target with doping content of 1.5% and 0.3%, respectively. The sputtering gas is a mixed gas of Ar and O2. The native ZnO thin film is insulating. The conductivity type is n-type after annealed at 600 ℃ for 5 min, and p-type after annealed at 800 ℃ for 5 min. The resistivity, carrier concentration and Hall mobility of the p-type ZnO thin film were 12.4 Ω · cm, 1.6 × 10 17 cm -3 and 3.29 cm 2 V-1.s-1, respectively. X-ray diffraction measurement results show that all the samples have only (002) diffraction peaks and are shifted to a larger angle than the undoped ZnO grown under the same conditions, meaning that both In and P occupy Zn sites. XPS test results show that in co-doped ZnO film, P instead of O instead of Zn. Therefore, both In and P replace Zn in the indium-phosphorus co-doped ZnO thin film, and PZn and 2 zinc vacancies (VZn) form a PZn-2VZn composite acceptor. The film shows p type.