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研究了用改进的Bridgman法生长的PMNT62/38单晶在其生长过程中的分凝现象,研究了分凝导致的成分不均匀及其对介电和压电性能的影响.XRFA分析表明,PMNT62/38单晶底部的PbTiO3(PT)含量为x=35.2mol％,而顶部的PT含量为43mol％.底部晶体(001),(110)和(111)三种切型的晶片加电场极化后,其介电和压电性能出现了异常的现象.(110)切型的压电模量最大,为1200pC/N;(111)次之,为789pC/N;(001)最低,为371pC/N.极化后的(110)和(111)晶片在室温、1kHz频率下的相对介电常数(两种切型的εr都在10000左右),约为(001)晶片(εr-5000)的1倍,并且介电常数在低温端有上升的趋势.
The segregation phenomenon of PMNT62 / 38 single crystal grown by the improved Bridgman method was studied in the course of its growth, and the influence of heterogeneity caused by segregation and its influence on the dielectric and piezoelectric properties was studied. XRFA analysis showed that PMNT62 The content of PbTiO3 (PT) in the bottom of the single crystal / x 38 was x = 35.2 mol%, while the top PT content was 43 mol%. The bottom crystal (001), (110) and , The dielectric and piezoelectric properties appeared abnormal phenomenon.The piezoelectric modulus of the (110) -cut type was the largest, 1200pC / N, (111) times, 789pC / N, (001) the lowest, 371pC / N. The relative permittivities of the (110) and (111) wafers after polarization at room temperature and 1 kHz (εr of both cuts are around 10000), about (001) wafers (εr-5000) 1 times, and the dielectric constant in the low temperature end of a rising trend.