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采用双管汽相外延工艺可实现异质结的多层薄膜连续生长。我们用这种系统已经生长出了多层薄膜(例如可交替生长50层厚度200(?)的InAsP和InP),双异质结的各晶层总生长时间约30分钟。最近报导了在(311)InP衬底上实现良好汽相外延生长的情况。(311)晶向的衬底为外延生长成核提供了最佳条件,生长层的质量比(100)和(111)InP衬底上的好。(311)InP衬底上汽相外延生长层的
The double-tube vapor phase epitaxy process can realize the continuous growth of heterojunction multilayer films. We have grown multilayer films (such as InAsP and InP that alternately grow 50 layers in 200Å thickness) using this system. The total growth time for each layer of the double heterojunction is about 30 minutes. Recently, the case of achieving good vapor phase epitaxy on (311) InP substrate has been reported. The (311) crystallographic orientation provides the best conditions for epitaxial growth to nucleate, and the growth layers have better mass ratios (100) and (111) on InP substrates. (311) InP substrate vapor phase epitaxial growth layer