论文部分内容阅读
Schwettman, Chiang和Brown以及Grunthaner和Maserjian等人已经证明了采用不同的预氧化清洗方法,可以改变硅热氧化时SiO_2的生长速率。本文描述的是关于氧化动力学的同一研究结果。在该实验中,采用了包括NH_4OH-H_2O_2,HCl-H_2O_2和浓HF的各种硅表面处理方法。选择这些化学处理方法来进行研究,是因为它们构成了广泛使用的RCA清洗方法。以前在这方面开展的工作适合于生长130nm以下的氧化膜,而本研究扩展到经化学处理后生长的氧化膜可达430nm。在所研究的24～430nm的整个厚度范围内,氧化动力学是不同的。
Schwettman, Chiang and Brown, and Grunthaner and Maserjian et al. Have shown that different pre-oxidation cleaning methods can be used to change the growth rate of SiO 2 during thermal silicon oxidation. Described herein is the same study on oxidation kinetics. In this experiment, various silicon surface treatment methods including NH 4 OH-H 2 O 2, HCl-H 2 O 2, and concentrated HF were employed. The choice of these chemical treatments was studied because they make up the widely used RCA cleaning method. The previous work in this area is suitable for the growth of oxide film below 130nm, while the study extended to oxide film grown after chemical treatment up to 430nm. Oxidation kinetics are different across the entire thickness range of 24-430 nm studied.