,Stress and strain analysis of Si-based Ⅲ-Ⅴ template fabricated by ion-slicing

• 作 者: Shuyan Zhao Yuxin Song Hao Liang Tingting Jin Jiajie Lin Li Yue Tiangui You Chang Wang Xin Ou Shumin Wang
• 机 构: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and
• 出 处: 中国物理B（英文版）
• 发表日期: 2020年7期
• 关键词: Ⅲ-VOI template finite element method (FEM) critical thickness

Strain and stress were simulated using finite element method (FEM) for three Ⅲ-Ⅴ-on-Insulator (Ⅲ-VOI) structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for optoelectronic devices on Si.The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy.Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness.The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk.The simulated results reveal thermal stress on Al2O3 over 1 GPa,which is much higher than its critical stress for interfacial fracture.InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.