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利用可控射频溅射技术生长的氮化硅作绝缘膜,制造出Al/Si_3N_4/n-GaAs 的MIS 二极管和埋沟耗尽型GaAsMISFET.溅射时不通纯氢,器件的C-V 和I_D-V_D 特性中显示出明显的滞后效应和环状回线.溅射前先用高纯氢等离子体处理GaAs 表面,溅射过程中伴以微量的纯氢,溅射后适当退火,可以得到基本上没有滞后效应的C-V 曲线和I_D-V_D 特性中几乎没有环状迴线的MISFET.测量表明:g_m 的最大值约为2.7mS,界面陷阱密度为2.7×10~(11)～1.4×10~(12)cm~(-2)eV~(-1),界面陷阱能级位于导带下0.55和0.13eV 处,表面迁移率为4000～5400cm~2V~(-1)s~(-1).
The MIS diode and buried depletion type GaAsMISFET of Al / Si_3N_4 / n-GaAs were fabricated by using silicon nitride grown by controlled RF sputtering as the insulating film, and pure hydrogen was not implanted during sputtering. CV and I_D-V_D of the device Characteristics show significant hysteresis and loop back to the line before sputtering sputtered with high purity hydrogen plasma treatment of GaAs, sputtering process with a trace of pure hydrogen, after sputtering appropriate annealing can be obtained substantially no Hysteresis effect CV curve and I_D-V_D characteristics of almost no loop back to the MISFET measurements show that: g_m maximum of about 2.7mS, the interface trap density of 2.7 × 10 11 ~ 1.4 × 10 12 ) cm ~ (-2) eV ~ (-1). The interface trap energy levels are located at 0.55 and 0.13eV below the conduction band, and the surface mobility is 4000 ~ 5400cm ~ 2V ~ (-1) s ~ (-1).