论文部分内容阅读
运用电化学阳极钝化技术对Fe30Mn9Al合金在1 mol/L Na_2SO_4溶液中进行不同时间的表面钝化处理;利用俄歇电子能谱(AES)、X射线光电子能谱(XPS)表面分析技术及Mott-Schottky曲线测试技术研究钝化时间对Fe30Mn9Al合金钝化膜的组成结构与半导体特性的影响。结果表明:Fe30Mn9Al合金在1 mol/L Na_2SO_4溶液中钝化15 min所得钝化膜分为内外2层,外层具有n型半导体特征,由Fe_2O_3、Al_2O_3、Mn_2O_3、FeOOH和AlOOH组成,内层具有p型半导体特征,由MnO组成。随着钝化时间由15 min增至5 h,钝化膜中的MnO溶解,Mn含量降低,Fe、Al填充Mn留下的空位在膜内富集,Fe、Al氧化物转变为Fe、Al氢氧化物,钝化膜由FeOOH、AlOOH和Mn_2O_3组成,具有n型半导体特征。与钝化15 min所得钝化膜相比,钝化5 h所得钝化膜的施主浓度ND由2.58′10~(21) cm~(-3)降至1.96′10~(21) cm~(-3),平带电位Efb由–283 mV降至–366 mV,钝化膜的保护性能提高。
The surface passivation of Fe30Mn9Al alloy in 1 mol / L Na_2SO_4 solution was performed by electrochemical anodic passivation technique. The surface morphology of the Fe30Mn9Al alloy was characterized by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) - Schottky curve test to study the influence of passivation time on the composition and semiconductor properties of Fe30Mn9Al alloy passivation films. The results show that the passive film of Fe30Mn9Al alloy passivated for 15 min in 1 mol / L Na_2SO_4 solution is divided into inner and outer two layers, and the outer layer is n - type semiconductor and consists of Fe_2O_3, Al_2O_3, Mn_2O_3, FeOOH and AlOOH, P-type semiconductor features, composed of MnO. As passivation time increased from 15 min to 5 h, the MnO in the passivation film was dissolved and the Mn content decreased. The vacancies left by Fe and Al-filled Mn were enriched in the film, and the Fe and Al oxides were changed to Fe and Al The hydroxide, passivation film consists of FeOOH, AlOOH and Mn_2O_3 with n-type semiconductor characteristics. Compared with the passivation film obtained after passivation for 15 min, the donor concentration of passivation film obtained from passivation for 5 h decreased from 2.58’10 "(21) cm ~ (-3) to 1.96’10 ~ (21) cm ~ ( -3). The flatband potential Efb decreased from -283 mV to -366 mV, and the protective performance of passivation film was improved.